Theia

R&D SCALE WAFER COATING SYSTEM

THEIA combines the production-proven design and system components of our commercial solution, APOLLO, in an R&D package that delivers unmatched performance, flexibility, reliability, and safety. THEIA is field upgradeable to accommodate the ever-changing needs of scientists and engineers, enabling a seamless transition from R&D to production. Recipes created with THEIA can be sent to APOLLO for a simple and straightforward path to commercial scale production of semiconductor wafer coating.

Description

PERFORMANCE
THEIA delivers ultra fast deposition with Forge Nano’s patented SMFD-ALD™ in a low cost system for R&D budgets. Sub-second ALD cycle times allow efficient and rapid exploration of applications requiring thick films. Covering challenging patterned substrates such as advanced-generation DRAM device wafers, membranes, sensors, electron multipliers, etc. with aspect ratios up to 1,000. THEIA is a low-cost and versatile ALD system that fits most R&D budgets. The flexible chamber design allows for both; round up to 200 mm substrate chuck that fits semiconductor wafers, or square parts carrying tray that better accommodates panels or randomly shaped parts.


CAPABILITIES

  • Fast and thick film deposition ( > 5 micron)
  • Fast ALD deposition at low temperatures
  • Low temperature processing (down to 80 °C)
  • Seamless incorporation of nano-laminates with reproducible atomic-layer control
  • Composite ternary and quaternary alloy films with no throughput penalty
  • In situ QCM monitoring of film growth with high mass and time resolution
  • Field reconfigurable

SPECIFICATIONS

  • Temperature Window: 50 – 500 °C
  • Liquid Chemical Inlets: Up to 6
  • Gaseous Chemical Inlets: Up to 4
  • Footprint: 60″ L x 32″ W x 76″ H
  • Capacity: Up to 200mm wafers
  • 5mm height clearance for coupons and objects
  • Substrate Handling: Manual single wafer loading

ULTRA FAST DEPOSITION WITH FORGE NANO’S PATENTED SMFD-ALD™

Chemistries: Al2O3, SiO2, AZO, TiO2, GaN, TiN, Bi2O3, Pt, Co, Cu, Ta205, Hf203, MLD

THEIA is ideal for exploration of newly developed ALD precursors. At the initial stage, ALD precursors are often extremely expensive ($1,000/gm is not unusual) and are available in very small quantities. Users also benefit from the many mature high productivity ALD processes that include HfO2, ZrO2, Ta2O5 SiO2, <300°C TiN, BN, GaN, Nb3N5 and more, available as turn-key processes from Forge Nano. Covering challenging patterned substrates such as advanced-generation DRAM device wafers, membranes, sensors, electron multipliers, etc. with up to 1,000 X enhanced area.

Applications: Copper Barrier, ALD-Cap, Optical, Adhesion/Seeding, TCOs


Find out more on the ForgeNano website